Reference Only
BCX56-10-H
NPN Bipolar Transistor, 80V, 1A, 500mW, SOT-89
Datasheet
BCX56-10-H Datasheet
Product Description
The BCX56-10-H Bipolar Junction Transistor (BJT) from Formosa Microsemi is a versatile NPN transistor suitable for a wide range of applications. With a collector-emitter voltage (Vceo) of 80V and a continuous collector current (Ic) of 1A, this transistor provides reliable performance in amplification and switching circuits. The BCX56-10-H is designed for through-hole mounting and comes in a SOT-89 package. Its 500mW power dissipation makes it suitable for low to medium power applications. Supreme Components International is an authorised distributor of Formosa Microsemi components, ensuring you receive a genuine and high-quality product. Consider the BCX56-10-H for your next design requiring a robust and reliable NPN BJT.
Technical Specifications
| Attribute | Description |
|---|---|
| Package Type | SOT-89 |
| Polarity Type | NPN |
| Dc Current Gain | 40 to 250 |
| Collector Current | 1 Ampere |
| Power Dissipation | 500 milliwatts |
| Transition Frequency | 100 Megahertz |
| Collector Emitter Voltage | 80 Volts |
| Operating Temperature Range | -55 degrees Celsius to +150 degrees Celsius |