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CGD65B240SH2
The CGD65B240SH2 is a 650V, 240mΩ GaN HEMT from Cambridge GaN Devices, ideal for high-efficiency power conversion.
Manufacturer:
Cambridge GaN DevicesSub Category:
OTHER
Datasheet
CGD65B240SH2 Datasheet
Product Description
The CGD65B240SH2 is a 650V, 240mΩ, 10A Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) from Cambridge GaN Devices. This device is designed for high-efficiency power conversion in a variety of applications, including AC/DC power supplies, Power Factor Correction (PFC), and motor drives. Its superior switching performance and low on-resistance contribute to reduced power losses and improved system efficiency. The CGD65B240SH2 is housed in a compact DFN8x8 package, enabling high power density designs. As an authorised distributor of Cambridge GaN Devices, Supreme Components International guarantees the authenticity and quality of this product. Benefit from enhanced power efficiency and reliability with this advanced GaN HEMT.
Technical Specifications
| Attribute | Description |
|---|---|
| Package Case | DFN8x8 |
| Mounting Type | Surface Mount |
| On Resistance | 240 mOhms |
| Number Of Pins | 8 |
| Transistor Type | GaN HEMT |
| Power Dissipation | 60 Watts |
| Drain Source Voltage | 650 Volts |
| Gate Threshold Voltage | 3.5 Volts |
| Continuous Drain Current | 10 Amperes |
| Operating Temperature Range | -55 Degrees Celsius to 150 Degrees Celsius |
Ordering Information
| Attribute | Description |
|---|---|
| MPQ | 2500 |
| WEIGHT | 0.3g |
| Packaging Type | Tape And Reel |