FMOSAE0085P02-H
| Parameter | Value |
|---|---|
| Package | T1006P3 |
| ESD | Yes |
| BVDSS (V) | -20 |
| ID (A) | -0.85 |
| PD (W) | 0.69 |
| IDSS @VDSS(V) | -16 |
| IDSS Max.(uA) | -1 |
| IGSS VGS(V) | ±12 |
| IGSS Max.(uA) | ±10 |
| VGS(th) Min.(V) | -0.5 |
| VGS(th) Max.(V) | -1 |
| VGS(th) @ID(mA) | -0.25 |
| RDSON1 Typ.(?) | 530m |
| RDSON1 Max.(?) | 640m |
| RDSON1 @VGS(V) | -4.5 |
| RDSON1 @ID(A) | -0.55 |
| RDSON2 Typ.(?) | 1300m |
| RDSON2 Max.(?) | 1950m |
| RDSON2 @VGS(V) | -1.8 |
| RDSON2 @ID(A) | -0.35 |
| Ciss Typ.(pF) | 58 |
| Qg Typ.(nC) | 0.8 |
| AEC-Q101 Qualified | No |
Product Categories:
MOSFET