FMOSAE014N02-H
| Parameter | Value |
|---|---|
| Package | T1006P3 |
| Type | N MOS |
| ESD | Yes |
| BVDSS (V) | 20 |
| ID (A) | 1.4 |
| PD (W) | 0.7 |
| IDSS @VDSS(V) | 16 |
| IDSS Max.(uA) | 1 |
| IGSS VGS(V) | ±8 |
| IGSS Max.(uA) | ±10 |
| VGS(th) Min.(V) | 0.5 |
| VGS(th) Max.(V) | 1 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 190m |
| RDSON1 Max.(?) | 230m |
| RDSON1 @VGS(V) | 4.5 |
| RDSON1 @ID(A) | 0.55 |
| RDSON2 Typ.(?) | 303m |
| RDSON2 Max.(?) | 455m |
| RDSON2 @VGS(V) | 1.8 |
| RDSON2 @ID(A) | 0.35 |
| Ciss Typ.(pF) | 43 |
| Qg Typ.(nC) | 2 |
| AEC-Q101 Qualified | No |
Product Categories:
MOSFET