Reference Only
FMOSAE0P66P02K-H
N-Channel Power MOSFET, 60V, 2A, SOT-23 Package
Datasheet
FMOSAE0P66P02K-H Datasheet
Product Description
The FMOSAE0P66P02K-H Power MOSFET from Formosa Microsemi is an N-Channel enhancement mode MOSFET designed for efficient power switching. With a drain-source voltage rating of 60V and a continuous drain current of 2A, this MOSFET is suitable for a variety of applications. Its low on-resistance minimizes power loss, contributing to improved energy efficiency. The device is housed in a small SOT-23 package, making it ideal for space-constrained designs. As an authorized distributor of Formosa Microsemi components, Supreme Components International guarantees the authenticity and quality of this product. This MOSFET is commonly used in DC-DC converters, load switches, and other power management circuits.
Technical Specifications
| Attribute | Description |
|---|---|
| Package Type | SOT-23 |
| Polarity Type | N-Channel |
| Gate Charge Value | 5.5 nanoCoulombs |
| Drain Source Voltage | 60 Volts |
| Continuous Drain Current | 2 Amperes |
| Drain Source On Resistance | 0.12 Ohm at GateSourceVoltage equals 10 Volts |
| Operating Temperature Range | Negative 55 Degrees Celsius to Positive 150 Degrees Celsius |
Ordering Information
| Attribute | Description |
|---|---|
| Packaging Type | Tape And Reel |