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FMOSAM07P8DN02E-H

FMOSAM07P8DN02E-H

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FMOSAM07P8DN02E-H

N-Channel MOSFET, 80V, 60A, DFN5X6 package

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
OTHER
Formosa Microsemi

Product Description

Supreme Components International, an authorised distributor, presents the FMOSAM07P8DN02E-H, a high-performance N-Channel Power MOSFET manufactured by Formosa Microsemi. This MOSFET features a drain-source voltage (Vds) of 80V and a continuous drain current (Id) of 60A, making it suitable for a wide range of power management applications. The device is packaged in a DFN5X6, offering excellent thermal performance and space efficiency. Ideal for synchronous rectification, DC-DC converters, and motor control applications. Benefit from Formosa Microsemi's quality and Supreme Components International's reliable distribution network. This MOSFET ensures efficient power conversion and robust performance in demanding environments. Explore its capabilities for your next power design project.

Product Tags

Technical Specifications

Attribute Description
Package DFN5X6
Polarity N-Channel
Gate Charge 25 nanoCoulombs
Mounting Type Surface Mount
Current Rating 60 Amperes
Voltage Rating 80 Volts
Operating Temperature -55 Degrees Celsius to 175 Degrees Celsius (Junction Temperature)
Drain-Source On-Resistance At Gate-Source Voltage Equals 10 Volts 7.8 milliOhms

Ordering Information

Attribute Description
Packaging Type Tape And Reel
This is a staging environment

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