FMOSB160N10-Q1
| Parameter | Value |
|---|---|
| Package | TO-263 |
| Type | N MOS |
| BVDSS (V) | 100 |
| ID (A) | 160 |
| PD (W) | 231 |
| EAS (mJ) | 324 |
| IDSS @VDSS(V) | 80 |
| IDSS Max.(uA) | 1 |
| IGSS VGS(V) | ±20 |
| IGSS Max.(uA) | 0.1 |
| VGS(th) Min.(V) | 2 |
| VGS(th) Max.(V) | 4 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 3.5m |
| RDSON1 Max.(?) | 4.2m |
| RDSON1 @VGS(V) | 10 |
| RDSON1 @ID(A) | 20 |
| Ciss Typ.(pF) | 3433 |
| Qg Typ.(nC) | 57 |
| AEC-Q101 Qualified | Yes |
Product Categories:
MOSFET