FMOSGTAC130N10-H
| Parameter | Value |
|---|---|
| Package | T5060P8 |
| Type | N MOS |
| BVDSS (V) | 100 |
| ID (A) | 130 |
| PD (W) | 131.6 |
| EAS (mJ) | 320 |
| IDSS @VDSS(V) | 100 |
| IDSS Max.(uA) | 1 |
| IGSS VGS(V) | ±20 |
| IGSS Max.(uA) | ±10 |
| VGS(th) Min.(V) | 1.2 |
| VGS(th) Max.(V) | 2.5 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 3.5m |
| RDSON1 Max.(?) | 4.5m |
| RDSON1 @VGS(V) | 10 |
| RDSON1 @ID(A) | 20 |
| RDSON2 Typ.(?) | 5.2m |
| RDSON2 Max.(?) | 6.7m |
| RDSON2 @VGS(V) | 4.5 |
| RDSON2 @ID(A) | 15 |
| Ciss Typ.(pF) | 5475 |
| Qg Typ.(nC) | 111.2 |
| AEC-Q101 Qualified | No |
Product Categories:
MOSFET