FMOSGTAC35N10-H
| Parameter | Value |
|---|---|
| Package | T5060P8 |
| Type | N MOS |
| BVDSS (V) | 100 |
| ID (A) | 35 |
| PD (W) | 69 |
| EAS (mJ) | 36 |
| IDSS @VDSS(V) | 80 |
| IDSS Max.(uA) | 1 |
| IGSS VGS(V) | ±20 |
| IGSS Max.(uA) | ±0.1 |
| VGS(th) Min.(V) | 1.3 |
| VGS(th) Max.(V) | 2.4 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 24m |
| RDSON1 Max.(?) | 31m |
| RDSON1 @VGS(V) | 10 |
| RDSON1 @ID(A) | 10 |
| RDSON2 Typ.(?) | 31m |
| RDSON2 Max.(?) | 40m |
| RDSON2 @VGS(V) | 4.5 |
| RDSON2 @ID(A) | 6 |
| Ciss Typ.(pF) | 513 |
| Qg Typ.(nC) | 10 |
Product Categories:
MOSFET