FMOSPW32NM65-H
| Parameter | Value |
|---|---|
| Package | TO-247 |
| Type | N MOS |
| BVDSS (V) | 650 |
| ID (A) | 32 |
| PD (W) | 347 |
| EAS (mJ) | 500 |
| IDSS @VDSS(V) | 650 |
| IDSS Max.(uA) | 10 |
| IGSS VGS(V) | ±30 |
| IGSS Max.(uA) | ±0.1 |
| VGS(th) Min.(V) | 2.5 |
| VGS(th) Max.(V) | 4.5 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 95m |
| RDSON1 Max.(?) | 110m |
| RDSON1 @VGS(V) | 10 |
| RDSON1 @ID(A) | 10 |
| Ciss Typ.(pF) | 2869 |
| Qg Typ.(nC) | 72 |
| AEC-Q101 Qualified | No |
Product Categories:
MOSFET