FMOSQ02DN10-H
| Parameter | Value |
|---|---|
| Package | SOP-08 |
| Type | Dual N MOS |
| BVDSS (V) | 100 |
| ID (A) | 2.4 |
| PD (W) | 2.5 |
| EAS (mJ) | 0.92 |
| IDSS @VDSS(V) | 80 |
| IDSS Max.(uA) | 1 |
| IGSS VGS(V) | ±20 |
| IGSS Max.(uA) | ±0.1 |
| VGS(th) Min.(V) | 1.2 |
| VGS(th) Max.(V) | 2.5 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 111m |
| RDSON1 Max.(?) | 139m |
| RDSON1 @VGS(V) | 10 |
| RDSON1 @ID(A) | 2 |
| RDSON2 Typ.(?) | 155m |
| RDSON2 Max.(?) | 195m |
| RDSON2 @VGS(V) | 4.5 |
| RDSON2 @ID(A) | 1 |
| Ciss Typ.(pF) | 103 |
| Qg Typ.(nC) | 2.5 |
| AEC-Q101 Qualified | No |
Product Categories:
MOSFET