Reference Only
FMOSTHAE2N7002E-Q1-H
N-Channel MOSFET, 700V, 2A, TO-251/TO-252
Datasheet
FMOSTHAE2N7002E-Q1-H Datasheet
Product Description
The FMOSTHAE2N7002E-Q1-H N-Channel MOSFET, manufactured by Formosa Microsemi, is a high-performance component suitable for a wide range of applications. With a drain-source voltage (Vds) of 700V and a continuous drain current (Id) of 2A, this MOSFET is well-suited for power supplies, motor control, and high-voltage switching circuits. Its low on-resistance minimizes power loss and enhances efficiency. The device is available in a TO-251/TO-252 package, offering excellent thermal performance and ease of mounting. As an authorized distributor of Formosa Microsemi, Supreme Components International guarantees the authenticity and quality of this product. Trust Supreme Components International for your electronic component needs.
Technical Specifications
| Attribute | Description |
|---|---|
| Gate Charge | 5.5 nanoCoulombs |
| Package Type | TO-251 or TO-252 |
| Channel Polarity | N-Channel |
| Drain Source Voltage | 700 Volts |
| Transistor Technology | MOSFET |
| Continuous Drain Current | 2 Amperes |
| Drain Source On Resistance | 5.5 Ohm at GateSourceVoltage equals 10V |
| Operating Temperature Range | Negative 55 degrees Celsius to 150 degrees Celsius (Junction Temperature) |