FMOSTHAGDB10DN02E-H
| Parameter | Value |
|---|---|
| Type | Dual N MOS |
| ESD | Yes |
| BVDSS (V) | 20 |
| ID (A) | 10 |
| IDSS @VDSS(V) | 16: IDSS Max.(uA): 1 |
| IGSS VGS(V) | ±8 |
| IGSS Max.(uA) | ±10 |
| VGS(th) Min.(V) | 0.4 |
| VGS(th) Max.(V) | 1 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 9.3m |
| RDSON1 Max.(?) | 11.5m |
| RDSON1 @VGS(V) | 4.5: RDSON1 @ID(A): 5 |
| RDSON2 Typ.(?) | 12.5m |
| RDSON2 Max.(?) | 17m |
| RDSON2 @VGS(V) | 2.5 |
| RDSON2 @ID(A) | 5 |
| Ciss Typ.(pF) | 1700 |
| Qg Typ.(nC) | 17 |
Product Categories:
MOSFET