Reference Only
G3F18MT12J
1200V, 18A SiC Schottky Diode
Datasheet
G3F18MT12J Datasheet
Product Description
The G3F18MT12J is a 1200V, 18A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode offers superior performance compared to traditional silicon diodes, featuring near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. These characteristics make it suitable for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The G3F18MT12J significantly reduces switching losses, enhances efficiency, and enables higher power density designs. Its robust design ensures reliable operation in demanding environments. Choose this SiC Schottky diode for your next-generation power electronics applications.
Technical Specifications
| Attribute | Description |
|---|---|
| Technology | Silicon Carbide Schottky |
| Package Type | TO-277 |
| Current Rating | 18 Amperes |
| Mounting Style | Surface Mount |
| Voltage Rating | 1200 Volts |
| Reverse Recovery Time | 0 Nanoseconds |
| Forward Current Rating | 18 Amperes |
| Typical Forward Voltage | 1.6 Volts |
| Operating Temperature Range | -55 Degrees Celsius to +175 Degrees Celsius |
| Maximum Junction Temperature | 175 Degrees Celsius |
| Maximum Repetitive Reverse Voltage | 1200 Volts |