Reference Only
GE10MPS06E
10A, 600V SiC Schottky Diode
Manufacturer:
GeneSiC SemiconductorSub Category:
OTHER
Datasheet
GE10MPS06E Datasheet
Product Description
The GE10MPS06E SiC Schottky Diode from GeneSiC Semiconductor, available at Supreme Components International, an authorised distributor, offers exceptional performance in demanding power electronics applications. This 10A, 600V diode leverages Silicon Carbide (SiC) technology to deliver ultra-fast switching speeds, near-zero reverse recovery current, and temperature-independent switching behavior. These characteristics contribute to significantly reduced switching losses and improved overall system efficiency. The GE10MPS06E is well-suited for use in power factor correction (PFC) circuits, motor drives, solar inverters, and other high-frequency power conversion systems. Its robust design ensures reliable operation even under harsh conditions. Choose the GE10MPS06E for superior performance and efficiency in your power electronics designs. Supreme Components International guarantees genuine components and reliable supply.
Technical Specifications
| Attribute | Description |
|---|---|
| Package Type | TO-220AC |
| Surge Current | 70 Amperes |
| Current Rating | 10 Amperes |
| Voltage Rating | 600 Volts |
| Forward Current Rating | 10 Amperes |
| Reverse Recovery Charge | 22 nanoCoulombs |
| Typical Forward Voltage | 1.45 Volts |
| Maximum Junction Temperature | 175 degrees Celsius |