Reference Only
GE2X12MPS06D
1200V, 6A SiC Schottky Diode
Manufacturer:
GeneSiC SemiconductorSub Category:
OTHER
Datasheet
GE2X12MPS06D Datasheet
Product Description
The GE2X12MPS06D SiC Schottky Diode from GeneSiC Semiconductor is designed for high-voltage, high-frequency applications. Featuring a voltage rating of 1200V and a forward current of 6A, this diode provides exceptional efficiency and reliability. Its Silicon Carbide (SiC) construction enables significantly faster switching speeds and lower reverse recovery losses compared to traditional silicon diodes. This results in improved system efficiency and reduced heat dissipation. Typical applications include power factor correction (PFC), solar inverters, electric vehicle charging, and motor drives. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of this product. Benefit from the superior performance of SiC technology with the GE2X12MPS06D.
Technical Specifications
| Attribute | Description |
|---|---|
| Technology | Silicon Carbide (SiC) |
| Gate_Charge | 18 nanocoulombs |
| Package_Type | TO-252-2 |
| Configuration | Single |
| Current_Rating | 6 amperes |
| Mounting_Style | Surface Mount |
| Voltage_Rating | 1200 volts |
| Forward_Current_Rating | 6 amperes |
| Forward_Voltage_Typical | 1.6 volts |
| Operating_Temperature_Range | Minus 55 degrees Celsius to Plus 175 degrees Celsius |
| Maximum_Junction_Temperature | 175 degrees Celsius |
| Repetitive_Peak_Reverse_Voltage | 1200 volts |
| Reverse_Leakage_Current_Typical | 10 microamperes |