NV6127C

Reference Only

NV6127C

650V, 35mOhm GaN FET in DFN8x8

Sub Category:
OTHER
GeneSiC Semiconductor

Product Description

The NV6127C, manufactured by GeneSiC Semiconductor, is a high-performance 650V GaN FET (GAN_FET MOSFET) optimized for high-efficiency power conversion applications. Featuring an ultra-low on-resistance of 35mOhm, this device minimizes conduction losses and maximizes overall system efficiency. Its compact DFN8x8 package allows for high power density and ease of integration into various designs. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of the NV6127C. This GaN FET is suitable for applications such as power supplies, DC-DC converters, and motor drives, where efficiency and size are critical. Benefit from the superior switching performance and reliability of GaN technology with the NV6127C.

Product Tags

Technical Specifications

Attribute Description
Identifier 25 A
Technology Gallium Nitride
Gate_Charge 14 nanocoulombs
Package_Type DFN8x8
Mounting_Style Surface Mount
Voltage_Rating 650 Volts
Drain_Source_On_Resistance 35 milliohms
Operating_Temperature_Range Negative 55 Degrees Celsius to 150 Degrees Celsius (Junction Temperature)
This is a staging environment

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