S4D08120E
| Parameter | Value |
|---|---|
| Package | DPAK |
| VRWM?V? | 1200 |
| IO (A) | 8 |
| IFSM Max.(A) | 64 |
| IR Max.@VWM (?A) | 200(35 typical) |
| VF Max. (V) | 1.8(1.6 typical) |
| CT Max. (pF) | - |
| Part Status | Active |
Product Categories:
Discrete SiC Schottky Diodes
Silicon Carbide